ORTEC provides a wide range of depleted silicon surface barrier detectors to meet the needs of numerous research applications.
* All resolution measurements are performed and warranted at 21 ±1°C.
** Measured with 5.486-MeV natural alpha particles.
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A Series |
B Series
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Chief Application
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High-Resolution charged-particle spectroscopy (Nuclear Physics and Chemistry-Space Physics)
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Particle identification, telescopes of detectors (Nuclear Physics and Chemistry-Space Physics)
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| Detector Type |
Partially Depleted Silicon Surface Barrier |
Totally Depleted Silicon Surface Barrier |
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Starting Material
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Si
|
Si |
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Range of Active Area (mm2)
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25–450
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50–450
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Range of Active Thickness (µm)
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1000–2000
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150–2000
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Warranted Operating Temperature Range*
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+25°C to
–30°C
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+25°C to
–30°C
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Diode Structure
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Gold — N-type Si Aluminum Partial Depletion
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Gold — N-type Si Aluminum Total Depletion
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Nominal Equivalent** Stopping Power of Windows
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Entrance
800 Å Si
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Entrance
800 Å Si
Exit
2250 Å Si
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|
C Series
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D Series
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Chief Application
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Backscattering from a collimated source or beam target-angular correlation measurements (Nuclear Physics)
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Time-of-flight measurements with heavy ions (Nuclear Physics)
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Detector Type
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Annular Partially Depleted Silicon Surface Barrier |
Planar Totally Depleted Silicon Surface Barrier |
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Starting Material
|
Si
|
Si
|
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Range of Active Area (mm2)
|
50–450
|
10–450
|
|
Range of Active Thickness (µm)
|
100–1000
|
15–100
|
|
Warranted Operating Temperature Range*
|
25°C to
–30°C
|
10°C to
25°C
|
|
Diode Structure
|
Gold — N-type Si Aluminum Partial Depletion
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Gold — N-type Si Aluminum Total Depletion Planar
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Nominal Equivalent** Stopping Power of Windows
|
Entrance
800 Å Si
Exit
2250 Å Si
|
Entrance
800 Å Si
Exit
2250 Å Si
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|
F Series
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R Series
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Chief Application
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Heavy-ion spectroscopy (Nuclear Physics)
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Charged-particle spectroscopy operable in air and ambient light |
Detector Type
|
Partially Depleted Silicon Surface Barrier
|
Ruggedized Partially Depleted Silicon
|
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Starting Material
|
Si
|
Si
|
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Range of Active Area (mm2)
|
100–900
|
50–2000
|
|
Range of Active Thickness (µm)
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≥60
|
100–500
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|
Warranted Operating Temperature Range*
|
+25°C to
–30°C
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+25°C to
–30°C
|
|
Diode Structure
|
Gold — N-type Si Aluminum Partial Depletion High Field Strength
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Aluminum — P-type Si Gold Partial Depletion
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Nominal Equivalent** Stopping Power of Windows
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Entrance
800 Å Si
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Entrance
2300 Å Si
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