The most common application areas of Alpha Spectroscopy are in radiochemistry and the screening of health physics and environmental samples. The silicon radiation detectors of choice for these applications are ULTRA radiation detectors with a depletion depth of ≥100 microns and ULTRA-AS radiation detectors for ultra low background applications.
Additionally, many installations continue to use Ruggedized (R-Series) Surface Barrier radiation detectors, which are both low-background and light tight. The "SEE-NO-ALPHA" option offers warranted resolution specifications and have not been exposed to an alpha source to guard against backscattering contamination.
* All resolution measurements are performed and warranted at 21 ±1°C.
** Measured with 5.486-MeV natural alpha particles.
† ULTRA series detectors are manufactured by ion-implantation silicon-dioxide passivated technologies. Versions bakeable at 200°C available on special order.
|
ULTRA† |
ULTRA AS† |
|
Chief Application
|
High-resolution, high-efficiency alpha and beta spectroscopy
|
Ultra-low background high-efficiency alpha spectroscopy
|
| Key Features / Benefits |
- Optimal energy resolution using ultra-thin entrance contact
- High efficiency via design spacing
- Device stability with advanced surface passivation
- Lifetime usage with gold plated cans
- High quality and reliability
|
- Optimal energy resolution using ultra-thin entrance contact
- High efficiency via design spacing
- Device stability with advanced surface passivation
- Lifetime usage with gold plated cans
- High quality and reliability
|
|
Starting Material
|
Si
|
Si
|
|
Range of Active Area (mm2)
|
25–3000
|
300–1200
|
|
Range of Active Thickness (µm)
|
100–500
|
100
|
|
Warranted Operating Temperature Range*
|
+50°C to
–30°C
|
+50°C to
–30°C
|
|
Diode Structure
|
Implanted Boron — N-type Si Implanted As Partial Depletion
|
Implanted Boron — N-type Si Implanted As Partial Depletion
|
|
Nominal Equivalent** Stopping Power of Windows
|
Entrance
500 Å Si
|
Entrance
500 Å Si
|