Si Charged Particle Detectors for Research Selection Guide
ORTEC provides a wide range of depleted silicon surface barrier detectors to meet the needs of numerous research applications.
* All resolution measurements are performed and warranted at 21 ±1°C.
** Measured with 5.486-MeV natural alpha particles.
| A Series | B Series | |
| Chief Application | High-Resolution charged-particle spectroscopy (Nuclear Physics and Chemistry-Space Physics) | Particle identification, telescopes of detectors (Nuclear Physics and Chemistry-Space Physics) |
| Detector Type | Partially Depleted Silicon Surface Barrier | Totally Depleted Silicon Surface Barrier |
| Starting Material | Si | Si |
| Range of Active Area (mm2) | 25–450 | 50–450 |
| Range of Active Thickness (µm) | 1000–2000 | 150–2000 |
| Warranted Operating Temperature Range* | +25°C to –30°C | +25°C to –30°C |
| Diode Structure | Gold — N-type Si Aluminum Partial Depletion | Gold — N-type Si Aluminum Total Depletion |
| Nominal Equivalent** Stopping Power of Windows | Entrance 800 Å Si | Entrance 800 Å Si Exit 2250 Å Si |
| C Series | D Series | |
| Chief Application | Backscattering from a collimated source or beam target-angular correlation measurements (Nuclear Physics) | Time-of-flight measurements with heavy ions (Nuclear Physics) |
| Detector Type | Annular Partially Depleted Silicon Surface Barrier | Planar Totally Depleted Silicon Surface Barrier |
| Starting Material | Si | Si |
| Range of Active Area (mm2) | 50–450 | 10–450 |
| Range of Active Thickness (µm) | 100–1000 | 15–100 |
| Warranted Operating Temperature Range* | 25°C to –30°C | 10°C to 25°C |
| Diode Structure | Gold — N-type Si Aluminum Partial Depletion | Gold — N-type Si Aluminum Total Depletion Planar |
| Nominal Equivalent** Stopping Power of Windows | Entrance 800 Å Si Exit 2250 Å Si | Entrance 800 Å Si Exit 2250 Å Si |
| F Series | R Series | |
| Chief Application | Heavy-ion spectroscopy (Nuclear Physics) | Charged-particle spectroscopy operable in air and ambient light |
| Detector Type | Partially Depleted Silicon Surface Barrier | Ruggedized Partially Depleted Silicon |
| Starting Material | Si | Si |
| Range of Active Area (mm2) | 100–900 | 50–2000 |
| Range of Active Thickness (µm) | ≥60 | 100–500 |
| Warranted Operating Temperature Range* | +25°C to –30°C | +25°C to –30°C |
| Diode Structure | Gold — N-type Si Aluminum Partial Depletion High Field Strength | Aluminum — P-type Si Gold Partial Depletion |
| Nominal Equivalent** Stopping Power of Windows | Entrance 800 Å Si | Entrance 2300 Å Si |
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