Si Charged Particle Radiation Detectors for Research Applications

ORTEC provides a wide range of depleted silicon surface barrier detectors to meet the needs of numerous research applications.

* All resolution measurements are performed and warranted at 21 ±1°C.

** Measured with 5.486-MeV natural alpha particles.

A Series B Series

Chief Application

High-Resolution charged-particle spectroscopy (Nuclear Physics and Chemistry-Space Physics)

 Particle identification, telescopes of detectors (Nuclear Physics and Chemistry-Space Physics)
Detector Type Partially Depleted Silicon Surface Barrier  Totally Depleted Silicon Surface Barrier  

Starting Material

Si

Si 

Range of Active Area (mm2)

25–450

50–450

Range of Active Thickness (µm)

1000–2000

 150–2000

Warranted Operating Temperature Range*

+25°C to
–30°C

 +25°C to 
–30°C

Diode Structure

Gold — N-type Si Aluminum Partial Depletion

Gold — N-type Si Aluminum Total Depletion

Nominal Equivalent** Stopping Power of Windows

Entrance
800 Å Si

 Entrance
800 Å Si
Exit
2250 Å Si

C Series

D Series

Chief Application

Backscattering from a collimated source or beam target-angular correlation measurements (Nuclear Physics)   

Time-of-flight measurements with heavy ions (Nuclear Physics)

Detector Type
Annular Partially Depleted Silicon Surface Barrier  Planar Totally Depleted Silicon Surface Barrier 

Starting Material

Si

Si

Range of Active Area (mm2)

50–450

10–450

Range of Active Thickness (µm)

100–1000

15–100

Warranted Operating Temperature Range*

25°C to
–30°C

10°C to
25°C

Diode Structure

Gold — N-type Si Aluminum Partial Depletion

Gold — N-type Si Aluminum Total Depletion Planar

Nominal Equivalent** Stopping Power of Windows

Entrance
800 Å Si
Exit
2250 Å Si

Entrance
800 Å Si
Exit
2250 Å Si

F Series

R Series

Chief Application

Heavy-ion spectroscopy (Nuclear Physics)   

Charged-particle spectroscopy operable in air and ambient light
Detector Type
Partially Depleted Silicon Surface Barrier 
Ruggedized Partially Depleted Silicon 

Starting Material

Si

Si

Range of Active Area (mm2)

100–900

50–2000

Range of Active Thickness (µm)

≥60

100–500

Warranted Operating Temperature Range*

+25°C to
–30°C

+25°C to
–30°C

Diode Structure

Gold — N-type Si Aluminum Partial Depletion High Field Strength

Aluminum — P-type Si Gold Partial Depletion

Nominal Equivalent** Stopping Power of Windows

Entrance
800 Å Si

Entrance
2300 Å Si