Si Charged Particle Radiation Detectors for Alpha Spectroscopy

The most common application areas of Alpha Spectroscopy are in radiochemistry and the screening of health physics and environmental samples. The silicon radiation detectors of choice for these applications are ULTRA radiation detectors with a depletion depth of ≥100 microns and ULTRA-AS radiation detectors for ultra low background applications.

Additionally, many installations continue to use Ruggedized (R-Series) Surface Barrier radiation detectors, which are both low-background and light tight. The "SEE-NO-ALPHA" option offers warranted resolution specifications and have not been exposed to an alpha source to guard against backscattering contamination.

* All resolution measurements are performed and warranted at 21 ±1°C.

** Measured with 5.486-MeV natural alpha particles.

† ULTRA series detectors are manufactured by ion-implantation silicon-dioxide passivated technologies. Versions bakeable at 200°C available on special order.

ULTRA† ULTRA AS ULTRA CAM†

Chief Application

High-resolution, high-efficiency alpha and beta spectroscopy

Ultra-low background high-efficiency alpha spectroscopy

Alpha and beta continuous air monitoring (counting in adverse environment)

Key Features / Benefits
  • Optimal energy resolution using ultra-thin entrance contact
  • High efficiency via design spacing
  • Device stability with advanced surface passivation
  • Lifetime usage with gold plated cans
  • High quality and reliability
  • Optimal energy resolution using ultra-thin entrance contact
  • High efficiency via design spacing
  • Device stability with advanced surface passivation
  • Lifetime usage with gold plated cans
  • High quality and reliability
  • Special entrance contact coating ensures operation under harsh environmental conditions
  • Low bias voltage for ease of use and safety
  • High quality and reliability 

Starting Material

Si

Si

Si

Range of Active Area (mm2)

25–3000

300–1200

300–2000

Range of Active Thickness (µm)

100–500

100

100
(Deeper detector requires special order)

Warranted Operating Temperature Range*

+50°C to
–30°C

+50°C to
–30°C

+50°C to
–15°C

Diode Structure

Implanted Boron — N-type Si Implanted As Partial Depletion

Implanted Boron — N-type Si Implanted As Partial Depletion

Implanted Boron — N-type Si Implanted As Partial Depletion

Nominal Equivalent** Stopping Power of Windows

Entrance
500 Å Si

Entrance
500 Å Si

N/A