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Germanium Detector Stocklist

Photon Detector Assembly

Detector Element

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The detector element establishes the energy range and efficiency for useful x- or gamma-ray spectroscopy (Fig.12).

The principles of operation of the Germanium and Si(Li) detectors described in this section are described in Reference 2.

As shown in Fig. 10, the detector element is cooled from the outer or the front contact to which the HV is applied. The thermal connection between the cooling rod and the detector mounting cup is made with aluminum oxide, which is both a good thermal conductor and a good electrical insulator. The minimum distance between the endcap (which is at room temperature and ground potential) and the detector cup (which must be maintained at 85–100 K and to which HV is applied) is determined by field emission and thermal emissivity considerations.

The detector element contact at ground potential is connected to the input stage of the "front-end" electronics (see Fig. 13).

The Detector Shape Advantage
All ORTEC coaxial Germanium detectors are shaped as true right-circular cylinders with a deep hole (central contact) and "bulletized" front "corners." This precise machining of the crystals results in detectors with superior peak shape and timing characteristics.

Table 1. Some Basic Properties of Silicon and Germanium.*

  Si Ge
Atomic number 14 32
Density (300 K); g·cm–3 2.33 5.33
Atoms; cm–3 4.96 X 1022 4.41 X 1022
Dielectric constant 12 16
Forbidden energy gap (300 K); eV 1.115 0.665
Forbidden energy gap (0 K); eV 1.165 0.746
Electron mobility (300 K); cm2·V–1·s–1 1350 3900
Hole mobility (300 K); cm2·V–1·s–1 480 1900
Electron mobility (77 K); cm2·V–1·s–1 2.1 X 104 3.6 X 104
Hole mobility (77 K); cm2·V–1·s–1 1.1 X 104 4.2 X 104
Carrier saturation velocity; cm·s–1 (300 K) 8.2 X 106 5.9 X 106
Carrier saturation velocity; cm·s–1 (77 K) 107 9.6 X 106
Energy per hole-electron pair (300 K); eV 3.62 (not applicable)
Energy per hole-electron pair (77 K); eV 3.76 2.96
*All ORTEC semiconductor photon detectors are made of either germanium or lithium-drifted silicon.