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Introduction to Charged-Particle Detectors

Silicon Charged-Particle Detector Manufacturing

Table 1 summarizes the major physical properties of silicon. To produce silicon charged-particle detectors, ORTEC employs both ion-implantation and surface-barrier technologies. The two processes are complementary in that each technique is best for manufacturing certain types of detectors. Fig. 1 (A and B) shows simplified representations of the two manufacturing processes.

There are several advantages to using ion implantation:

  • A thinner and more rugged front contact; better energy resolution for some alpha spectroscopy applications
  • Lower electronic noise
  • Higher geometric efficiency for some alpha spectroscopy applications
  • Operation to 60°C and bakeout at 200°C.
The advantage of surface barrier technology is that it allows production of transmission detectors as thin as 10 µm or as thick as several mm.

ORTEC also manufactures deep, lithium-drifted silicon [Si(Li)] detectors for special applications.

fig1a.jpg (25279 bytes)Fig. 1(A). Simplified Diagram of Surface Barrier Si Detector Manufacturing

 

 

 

 

 

 

 

 

Fig. 1(B). Simplified Diagram of Ion-Implanted fig1b.jpg (27072 bytes)
Si Detector Manufacturing.

 

 

 

 

 

 

 

 

 

Table 1
Atomic Density, atoms/cm3 4.96 x 1022
Mass Density, g/cm3 2.33
Dielectric Coefficient 12
Energy Gap, eV 1.115
Average energy per electron-hole pair, eV/pair 3.62 at 300 K
3.76 at 80 K
Mobility, cm2 · V-1 · s-1
             Electron
             Hole
1350 (2.1 x 109 T-2.5
480 (2.3 x 109 T-2.7