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Introduction to Charged-Particle Detectors

Leakage Current

A silicon detector, just like any reverse-biased silicon diode, has a temperature dependent leakage current. At room temperature, ion-implanted detectors, such as the ULTRA Series, have a leakage current in the range of {D/100} X {1–10 nA/cm2 active area}, where D is the depletion thickness in microns; surface barrier detectors, on the other hand, have leakage current an order of magnitude higher, in the range of {D/100} X {20 to 100 nA/cm2}. As shown in Fig. 1, the leakage current is a strong function of the detector temperature and detector type.

The value of the leakage current is of interest, because, as shown in Fig. 1, the electronic noise increases with increasing leakage current.

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Fig. 1.  Leakage Current and Noise vs. Temperature for 3 Types of Si Charged-Particle Detectors.